THERMAL-BEHAVIOR OF FLUORINE IN SIO2 AND SI INVESTIGATED BY THE F-19(P,ALPHA-GAMMA) O-16 REACTION AND SECONDARY-ION MASS-SPECTROMETRY

被引:14
作者
YU, BG [1 ]
KONUMA, N [1 ]
ARAI, E [1 ]
OHJI, Y [1 ]
NISHIOKA, Y [1 ]
机构
[1] TOKYO INST TECHNOL,TOKYO 152,JAPAN
关键词
D O I
10.1063/1.349392
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thermal changes of implanted fluorine distributions in a SiO2 film and a (100)-oriented Si single crystal were investigated by the F-19(p, alpha-gamma) O-16 reaction and secondary-ion mass spectrometry. Fluorine in the Si accumulates to a damaged region (consistent with a Monte Carlo simulation) after annealing above 700-degrees-C for 30 min. This effect is not observed in the SiO2. Once the fluorine is trapped by the damaged region, nearly 80% of the fluorine stays in the silicon after annealing at 800-degrees-C. In contrast, only 10% of implanted fluorine remains in the SiO2 after annealing at 800-degrees-C. These effects are explained by assuming the difference in the natures of imperfections in these samples. Above 1000-degrees-C, most of the fluorine diffuses out of both systems.
引用
收藏
页码:2408 / 2412
页数:5
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