MEASUREMENTS OF DEGRADATION OF SILICON DETECTORS AND ELECTRONICS IN VARIOUS RADIATION ENVIRONMENTS

被引：7

作者：

BEUVILLE, E

CENCI, P

FEDERSPIEL, A

GOSSLING, C

HEIJNE, EHM

JARRON, P

KRANER, HW

MASSAM, T

MUNDAY, D

PAL, T

机构：

[1] BROOKHAVEN NATL LAB,UPTON,NY 11973

[2] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE,ENGLAND

[3] CERN,EUROPEAN ORG NUCL RES,CH-1211 GENEVA 23,SWITZERLAND

[4] UNIV PERUGIA,DEPT PHYS,I-06100 PERUGIA,ITALY

[5] UNIV PERUGIA,IST NAZL FIS NUCL,I-06100 PERUGIA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 288卷 / 01期

关键词：

D O I：

10.1016/0168-9002(90)90465-I

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Displacement damage in silicon particle detectors, exposed to a high-energy muon irradiation at the CERN SPS, is observed to be less in p-type than in n-type silicon. X-ray irradiation of various test structures reveals the importance of surface leakage currents. The irradiation of detectors and electronics in the UA2 collider experiment at the SPS indicates a strong, low energy neutron component, which degrades the detectors but hardly influences the CMOS circuits. © 1990.

引用

页码：68 / 75

页数：8

共 7 条

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