SCATTERING OF ELECTRONS BY DISLOCATIONS IN N-TYPE INSB

被引：0
|
作者：
PALKIN, AM
KRAVCHEN.AF
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 3卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1122 / &
相关论文
共 50 条
  • [1] TRANSPORT PHENOMENA IN N-TYPE INSB IN CASE OF INELASTIC POLAR SCATTERING OF ELECTRONS
    GUSEVA, GI
    ZVEZDIN, AK
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (06): : 1513 - &
  • [2] SCATTERING OF HOT-ELECTRONS IN N-TYPE INSB AT LOW-TEMPERATURES
    GERSHENZON, EM
    ILIN, VA
    LITVAKGO.LB
    RABINOVICH, RI
    SHAPIRO, EZ
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1626 - 1630
  • [3] SCATTERING OF ELECTRONS BY CHARGED DISLOCATIONS IN INSB-TYPE SEMICONDUCTORS
    OSZWALDOWSKI, M
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (07) : 791 - 796
  • [4] RAMAN-SCATTERING FROM THE SPIN TRANSITION OF FREE-ELECTRONS IN N-TYPE INSB
    VDOVIN, AV
    SKOK, EM
    FEDAN, PN
    UVAROV, EI
    OPTIKA I SPEKTROSKOPIYA, 1982, 52 (02): : 206 - 208
  • [5] NOISE AND DIFFUSION OF HOT ELECTRONS IN n-TYPE InSb.
    Bareikis, V.
    Viktoravichyus, V.
    Gal'dikas, A.
    Milyushite, R.
    Pozhela, Yu.
    Soviet physics. Semiconductors, 1982, 16 (10): : 1165 - 1167
  • [6] NOISE AND DIFFUSIVITY OF HOT-ELECTRONS IN N-TYPE INSB
    BAREIKIS, V
    GALDIKAS, A
    MILIUSYTE, R
    POZHELA, J
    VIKTORAVICIUS, V
    JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 215 - 220
  • [7] NOISE AND DIFFUSION OF HOT-ELECTRONS IN N-TYPE INSB
    BAREIKIS, V
    VIKTORAVICHYUS, V
    GALDIKAS, A
    MILYUSHITE, R
    POZHELA, Y
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1165 - 1167
  • [8] FARADAY EFFECT DUE TO ″HOT″ ELECTRONS IN n-TYPE InSb.
    Potapov, V.T.
    Sokolovskii, A.V.
    Trifonov, V.I.
    Yaremenko, N.G.
    1973, 6 (07): : 1081 - 1083
  • [9] INFLUENCE OF MAGNETIC-FIELD ON HEATING OF ELECTRONS IN N-TYPE INSB
    ILIN, VA
    LITVAKGO.LB
    RABINOVI.RI
    SHAPIRO, EZ
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1089 - 1090
  • [10] INFLUENCE OF ELECTRON DENSITY ON PARAMAGNETIC RESONANCE OF ELECTRONS IN N-TYPE INSB
    GERSHENZON, EM
    PEVIN, NM
    FOGELSON, MS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (05): : 634 - +
12345