NOTE ON THE INTERPRETATION OF INJECTION-LEVEL-DEPENDENT SURFACE RECOMBINATION VELOCITIES

被引：39

作者：

BRENDEL, R

机构：

[1] Max-Planck-Institut für Festkörperforschung, Stuttgart, D-70569

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1995年 / 60卷 / 05期

关键词：

D O I：

10.1007/BF01538780

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface recombination velocity S - U/n is defined as the ratio between the surface recombination current density U and the excess minority carrier concentration n at the semiconductor surface. Measurements of injection-dependent surface recombination velocities apply modulation techniques, and thus, in reality, a differential surface recombination velocity S-diff = dU/dn is determined. The significance to distinguish S and S-diff when evaluating measurements is shown.

引用

页码：523 / 524

页数：2

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