HIGH-POWER SINGLEMODE ALGAAS DISTRIBUTED-BRAGG-REFLECTOR LASER-DIODES OPERATING AT 856NM

被引：20
作者：
MAJOR, JS
OBRIEN, S
GULGAZOV, V
WELCH, DF
LANG, RJ
机构：
[1] Spectra Diode Laboratories, San Jose, CA 95134
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 06期
关键词：
DISTRIBUTED BRAGG REFLECTOR LASERS; LASERS;
D O I：
10.1049/el:19940350
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Data are presented describing AlGaAs distributed Bragg reflector (DBR) laser diodes operating at 856 nm with single transverse and longitudinal mode behaviour beyond 270 mW CW. The threshold current of these lasers is 35mA, with a differential quantum efficiency of 58%. Preliminary lifetest data are presented.
引用
收藏
页码：496 / 497
页数：2
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