Next-Generation, Super-Hard-to-Process Substrates and Their High-Efficiency Machining Process Technologies Used to Create Innovative Devices

被引:9
作者
Doi, Toshiro [1 ]
机构
[1] Kyushu Univ, Global Innovat Ctr, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan
关键词
SiC; GaN and diamond substrates; dilatancy pad; high pressure & rotational polishing machine; plasma fusion CMP; singularity;
D O I
10.20965/ijat.2018.p0145
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
SiC, GaN, and diamond are known as super-hard-to-process substrate for next-generation green devices. In this paper, we report on some breakthrough in developing highly efficient processing for such hard-to-process materials, for which we propose improvements in conventional processing, and innovative processing. As part of our project, we developed a "dilatancy padR (R)" that can efficiently produce high-quality surfaces as well as a high-rigidity, highspeed and high-pressure processing machine. We also designed and prototyped "plasma fusion CMPR (R)," which is an innovative processing technology fusing CMP (Chemical Mechanical Polishing) with P-CVM (Plasma Chemical Vaporization Machining) to machine super-hard diamond substrates that are considered indispensable for future devices. Before the advent of "singularities" by 2045, super-hard-to-process substrates and ultra-precision polishing technology will become more and more essential.
引用
收藏
页码:145 / 153
页数:9
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