ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS

被引:617
作者
DEARNALEY, G
STONEHAM, AM
MORGAN, DV
机构
关键词
D O I
10.1088/0034-4885/33/3/306
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1129 / +
页数:1
相关论文
共 158 条
[1]   INITIATION OF ELECTRICAL BREAKDOWN IN ULTRAHIGH VACUUM [J].
ALPERT, D ;
LEE, DA ;
TOMASCHKE, H ;
LYMAN, EM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1964, 1 (02) :35-&
[2]  
ANDREWS PT, 1962, P S NUCL INSTR, P93
[3]   SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS [J].
ARGALL, F .
SOLID-STATE ELECTRONICS, 1968, 11 (05) :535-&
[4]   ELECTRICAL PROPERTIES OF AL-AL203-METAL STRUCTURES [J].
BARRIAC, C ;
PINARD, P ;
DAVOINE, F .
PHYSICA STATUS SOLIDI, 1969, 34 (02) :621-&
[5]  
BARRIAC C, 1966, CR ACAD SCI B PHYS, V262, P900
[6]  
BARRIAC C, 1968, CR ACAD SCI B PHYS, V266, P423
[7]   FURTHER PROPERTIES + SUGGESTED MODEL FOR NIOBIUM OXIDE NEGATIVE RESISTANCE [J].
BEAM, WR ;
ARMSTRONG, AL .
PROCEEDINGS OF THE IEEE, 1964, 52 (03) :300-&
[8]   CONDUCTION MECHANISM OF SELF-COMPENSATED-HIGHLY DISORDERED SEMICONDUCTORS (A POSSIBLE MODEL FOR SEMICONDUCTING GLASSES) .I. AMBIPOLAR CONDUCTIVITY [J].
BOER, KW .
PHYSICA STATUS SOLIDI, 1969, 34 (02) :721-&
[9]  
BOER KW, 1970, J APPL PHYS, V41, P2675, DOI 10.1063/1.1659281
[10]   CONDUCTION MECHANISM OF HIGHLY DISORDERED SEMICONDUCTORS (A POSSIBLE MODEL FOR SEMICONDUCTING GLASSES) .2. INFLUENCE OF CHARGED DEFECTS [J].
BOER, KW .
PHYSICA STATUS SOLIDI, 1969, 34 (02) :733-&