SELECTIVE DEPOSITION OF DIAMOND FILMS ON SILICON-WAFER WITH SIO2 MASKS BY TUNGSTEN FILAMENT CHEMICAL VAPOR-DEPOSITION

被引：5
|
作者：
YU, S
JIN, ZS
LU, XY
ZOU, GT
机构：
[1] Institute of Atomic and Molecular Physics, Jilin University, Changchun
来源：
MATERIALS LETTERS | 1991年 / 10卷 / 7-8期
关键词：
D O I：
10.1016/0167-577X(91)90155-Y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline diamond films were selectively deposited on silicon wafers by use of a SiO2 mask and tungsten filament chemical vapor deposition from a gas mixture of methane and hydrogen. The evaporation of the SiO2 mask during diamond synthesis and deposition was successfully controlled by optimizing the synthesis parameters.
引用
收藏
页码：375 / 378
页数：4
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