INSIGHTS INTO METASTABLE DEFECTS IN SEMIINSULATING GAAS FROM ELECTRONIC RAMAN STUDIES OF NONEQUILIBRIUM HOLES

被引：44

作者：

BRAY, R

WAN, K

PARKER, JC

机构：

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 57卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.57.2434

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2434 / 2437

页数：4

共 22 条

[1]

BACHELET GB, 1985, 17TH P INT C PHYS SE, P755

[2] PHOTORESPONSE OF THE ASGA ANTISITE DEFECT IN AS-GROWN GAAS [J].

BAEUMLER, M ;

KAUFMANN, U ;

WINDSCHEIF, J .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :781-783

[3] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (21) :2340-2343

[4]

DEIRI M, 1984, J PHYS C SOLID STATE, V17, pL627, DOI 10.1088/0022-3719/17/23/007

[5] IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

ELLIOTT, K ;

CHEN, RT ;

GREENBAUM, SG ;

WAGNER, RJ .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :907-909

[6] OPTICALLY ENHANCED DEFECT REACTIONS IN SEMI-INSULATING BULK GAAS [J].

JIMENEZ, J ;

GONZALEZ, MA ;

HERNANDEZ, P ;

DESAJA, JA ;

BONNAFE, J .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1152-1160

[7] LONG LIFETIME PHOTOCONDUCTIVITY IN SEMI-INSULATING BULK GAAS [J].

JIMENEZ, J ;

HERNANDEZ, P ;

DESAJA, JA ;

BONNAFE, J .

SOLID STATE COMMUNICATIONS, 1985, 55 (05) :459-462

[8] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

KUSZKO, W .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2204-2207

[9] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

LAGOWSKI, J ;

PARSEY, JM ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :302-304

[10] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

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