DEFECTS IN ZN-DIFFUSED INP SINGLE-CRYSTALS

被引：0
|
作者：
DIXON, RH [1 ]
JAGER, W [1 ]
RUCKI, A [1 ]
URBAN, K [1 ]
HETTWER, HG [1 ]
STOLWIJK, NA [1 ]
MEHRER, H [1 ]
机构：
[1] UNIV MUNSTER, INST MET FORSCH, W-4400 MUNSTER, GERMANY
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The defect structure of semi-insulating Fe-doped LEC InP single crystals following Zn ampoule diffusion at 700 degrees C with metallic Zn and P as sources is characterized for different diffusion times (<3000 min) by analytical transmission electron microscopy of cross-section samples. The observations are correlated with Zn concentration profiles obtained by election microprobe measurements, A model which describes the formation of the defects is suggested.
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页码：539 / 542
页数：4
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