IMPROVEMENT OF DRAIN BREAKDOWN VOLTAGE OF GAAS POWER MESFETS BY A SIMPLE RECESS STRUCTURE

被引：47
作者：
FURUTSUKA, T
TSUJI, T
HASEGAWA, F
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期
关键词：
D O I：
10.1109/T-ED.1978.19137
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：563 / 567
页数：5
相关论文
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