AVALANCHE MULTIPLICATION IN BULK N-SI

被引：14

作者：

DALAL, VL

机构：

[1] Princeton University, Princeton

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 11期

关键词：

D O I：

10.1063/1.1652867

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The avalanche coefficient of electrons α has been measured in bulk n-Si for the first time. The measured values of α fit the theoretical curves of Baraff with εg < εi < 1.5 εg and 60 < λ < 80 A, where εi is the ionization energy and λ is the phonon mean-free path. The values of α agree with the extrapolated values from the p-n junction data of Lee, et al., but disagree with the results of Ogawa. © 1969 The American Institute of Physics.

引用

页码：379 / &

共 8 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].