A Simple Diode Model with Reverse Recovery

被引:145
作者
Lauritzen, Peter O. [1 ]
Ma, Cliff L. [1 ]
机构
[1] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA
关键词
D O I
10.1109/63.76804
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The basic diode charge-control model used in SPICE is extended to include reverse recovery. The diode charge transport equations are simplified using the lumped charge concept of Linvill, and the model is demonstrated on the Saber simulator for simple inductive and resistive Load circuits. The two model parameters, diode lifetime tau and diffusion transit time T-M can be easily determined from a switching waveform.
引用
收藏
页码:188 / 191
页数:4
相关论文
共 8 条
[1]  
Antognetti P, 1988, SEMICONDUCTOR DEVICE
[2]   STUDIES OF TURN-OFF EFFECTS IN POWER SEMICONDUCTOR-DEVICES [J].
DANIELSSON, BE .
SOLID-STATE ELECTRONICS, 1985, 28 (04) :375-391
[3]  
Gibbons J. F., 1966, SEMICONDUCTOR ELECTR
[4]   Diode Forward and Reverse Recovery Model for Power Electronic SPICE Simulations [J].
Liang, Young-Chii ;
Gosbell, Victor J. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 1990, 5 (03) :346-356
[5]  
Linvill J. G., 1961, TRANSISTORS ACTIVE C, P92
[6]   DETERMINATION OF CARRIER LIFETIME FROM RECTIFIER RAMP RECOVERY WAVEFORM [J].
TIEN, B ;
HU, CM .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) :553-555
[7]  
XU C. H., 1989, EUR POW EL OCT
[8]  
Xu C. H., PESC 88, P76