ANISOTROPY OF THE ELECTRICAL CONDUCTIVITY OF VO(2) SINGLE CRYSTALS

被引：79

作者：

Bongers, P. F. ^{[1
]}

机构：

[1] NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands

来源：

SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 09期

关键词：

D O I：

10.1016/0038-1098(65)90032-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electrical resistivity p of single crystals of VO(2) has been measured in directions parallel and perpendicular to the {100) (mon.) = {100} (tetr). direction for 180 < T < 650 degrees K. On both sides of the semiconductor-metal transition temperature rho perpendicular to/rho K approximate to 0. 5 (T(t) = 340 degrees K). This result does not agree with Morin's model of metallic conductivity in a narrow 3d-subband, and indicates clearly that the oxygen 2p-orbitals are involved In the conduction mechanism.

引用

页码：275 / 277

页数：3

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