INTERVALENCE BAND ABSORPTION IN STRAINED AND UNSTRAINED INGAAS MULTIPLE QUANTUM-WELL STRUCTURES

被引：69
作者：
FUCHS, G
HORER, J
HANGLEITER, A
HARLE, V
SCHOLZ, F
GLEW, RW
GOLDSTEIN, L
机构：
[1] BNR EUROPE,HARLOW,ESSEX,ENGLAND
[2] ALCATEL ALSTHOM RECH,MARCOUSSIS,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 02期
关键词：
D O I：
10.1063/1.106973
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the direct determination of absorption losses in unstrained InGaAs/InGaAsP and InGaAs/InGaAlAs and strained InGaAs/InGaAsP layer multiple quantum well (MQW) laser structures. In the case of the unstrained structures we find a strong dependence of the absorption on carrier density indicating the presence of an intrinsic optical loss mechanism, the intervalence band absorption (IVBA). In the strained layer InGaAs/InGaAsP structures, IVBA is completely switched off. Our results explain the superiority of strained layer InGaAs MQW lasers.
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页码：231 / 233
页数：3
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