OXYGEN AS A DONOR ELEMENT IN GERMANIUM

被引:14
作者
ELLIOTT, G
机构
关键词
D O I
10.1038/1801350b0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:1350 / 1351
页数:2
相关论文
共 7 条
[1]  
ARMSTRONG JA, 1957, B AM PHYS SOC 2, V2, P265
[2]  
BILLIG E, CITED INDIRECTLY
[3]   OXYGEN AND THE SURFACE ENERGY-LEVEL STRUCTURE ON GERMANIUM [J].
CLARKE, EN .
PHYSICAL REVIEW, 1954, 95 (01) :284-285
[4]  
DUNLAP, 1957, PROGR SEMICONDUCTORS, V2, P182
[5]   ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].
KAISER, W .
PHYSICAL REVIEW, 1957, 105 (06) :1751-1756
[6]   OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].
KAISER, W ;
KECK, PH .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887
[7]   HYDROGEN AND OXYGEN IN SINGLE-CRYSTAL GERMANIUM AS DETERMINED BY VACUUM FUSION GAS ANALYSIS [J].
THURMOND, CD ;
GULDNER, WG ;
BEACH, AL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (11) :603-605