UNPINNED GAAS MOS CAPACITORS AND TRANSISTORS

被引:146
作者
TIWARI, S
WRIGHT, SL
BATEY, J
机构
关键词
D O I
10.1109/55.6954
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:488 / 490
页数:3
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共 18 条
[1]   LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
BATEY, J ;
TIERNEY, E .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3136-3145
[2]   ELECTRICAL CHARACTERISTICS OF VERY THIN SIO2 DEPOSITED AT LOW SUBSTRATE TEMPERATURES [J].
BATEY, J ;
TIERNEY, E ;
NGUYEN, TN .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) :148-150
[3]   FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J].
BAYRAKTAROGLU, B ;
KOHN, E ;
HARTNAGEL, HL .
ELECTRONICS LETTERS, 1976, 12 (02) :53-54
[4]   GALLIUM ARSENIDE MOS TRANSISTORS [J].
BECKE, H ;
HALL, R ;
WHITE, J .
SOLID-STATE ELECTRONICS, 1965, 8 (10) :813-&
[5]  
CALLEGARI AC, COMMUNICATION
[6]   USE OF OXYGEN-DOPED ALXGA1-XAS FOR INSULATING LAYER IN MIS STRUCTURES [J].
CASEY, HC ;
CHO, AY ;
NICOLLIAN, EH .
APPLIED PHYSICS LETTERS, 1978, 32 (10) :678-679
[7]  
Fountain G. H., COMMUNICATION
[8]  
FOUNTAIN GG, 1987, FAL P M MAT RES SOC
[9]  
FREEOUF JL, COMMUNICATION
[10]   VARIATION OF N-GAAS (100) INTERFACE FERMI LEVEL BY GE AND SI OVERLAYERS [J].
GRANT, RW ;
WALDROP, JR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1015-1019