LOW THRESHOLD PULSED AND CONTINUOUS LASER OSCILLATION FROM ALGAAS/GAAS DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES

被引：40
作者：
VANDERZIEL, JP
DUPUIS, RD
LOGAN, RA
MIKULYAK, RM
PINZONE, CJ
SAVAGE, A
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 08期
关键词：
D O I：
10.1063/1.98266
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：454 / 456
页数：3
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共 13 条
[1]  
AMANN MC, 1979, ELECTRON LETT, V15, P442
[2]   ALGAAS-GAAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION - A REVIEW [J].
DUPUIS, RD .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :213-222
[3]   LOW-THRESHOLD HIGH-EFFICIENCY ALGAAS-GAAS DOUBLE-HETEROSTRUCTURE INJECTION-LASERS GROWN ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
VANDERZIEL, JP ;
LOGAN, RA ;
BROWN, JM ;
PINZONE, CJ .
APPLIED PHYSICS LETTERS, 1987, 50 (07) :407-409
[4]  
DUPUIS RD, IN PRESS J ELECTRON
[5]  
FISHER R, 1986, APPL PHYS LETT, V48, P1360
[6]   USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS [J].
MATTHEWS, JW ;
BLAKESLEE, AE ;
MADER, S .
THIN SOLID FILMS, 1976, 33 (02) :253-266
[7]   DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].
PETROFF, P ;
HARTMAN, RL .
APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471
[8]   ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
SAKAI, S ;
SOGA, T ;
TAKEYASU, M ;
UMENO, M .
APPLIED PHYSICS LETTERS, 1986, 48 (06) :413-414
[9]   ALGAAS/GAAS DH-LASERS ON SI SUBSTRATES GROWN USING SUPER LATTICE BUFFER LAYERS BY MOCVD [J].
SAKAI, S ;
SOGA, T ;
TAKEYASU, M ;
UMENO, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L666-L668
[10]  
TEMKIN H, 1982, ELECTRON LETT, V18, P703
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