EFFECT OF ANNEALING ON SEMICONDUCTOR IN A THIN-FILM TRANSISTOR

被引：10
|
作者：
NORIAN, KH [1 ]
机构：
[1] IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7 2BT,ENGLAND
来源：
THIN SOLID FILMS | 1977年 / 47卷 / 02期
关键词：
D O I：
10.1016/0040-6090(77)90360-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：195 / 201
页数：7
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