A SUBTHRESHOLD CURRENT MODEL FOR GAAS-MESFETS

被引：31
作者：
CHANG, CTM
VROTSOS, T
FRIZZELL, MT
CARROLL, R
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 02期
关键词：
D O I：
10.1109/EDL.1987.26555
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：69 / 72
页数：4
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