ISOELECTRONIC BOUND EXCITONS IN SILICON - THE ROLE OF DEEP ACCEPTORS

被引：21

作者：

THEWALT, MLW ^{[1
]}

ZIEMELIS, UO ^{[1
]}

PARSONS, RR ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT PHYS,VANCOUVER V6T 2A6,BC,CANADA

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.24.3655

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3655 / 3658

页数：4

共 9 条

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[8] EXCITONS BOUND TO AN ISOELECTRONIC TRAP IN SILICON [J].

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[9] LOCALIZED EXCITON BOUND TO AN ISOELECTRONIC TRAP IN SILICON [J].

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