ONSET OF DIFFUSION-DRIFT EMISSION REGIME AND THE TRANSITION FROM EXPONENTIAL TO LINEAR CURRENT-VOLTAGE CHARACTERISTIC OF TRIANGULAR BARRIER SEMICONDUCTOR STRUCTURES

被引：11
作者：
BUOT, FA
KRUMHANSL, JA
SOCHA, JB
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期
关键词：
D O I：
10.1063/1.93270
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：814 / 816
页数：3
相关论文
共 9 条
[1]  
BUOT FA, UNPUB
[2]   CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J].
KAZARINOV, RF ;
LURYI, S .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :810-812
[3]   Brownian motion in a field of force and the diffusion model of chemical reactions [J].
Kramers, HA .
PHYSICA, 1940, 7 :284-304
[4]   CHARGE INJECTION OVER BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J].
LURYI, S ;
KAZARINOV, RF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1242-1243
[5]   DENSITY OF STATES IN METAL-SEMICONDUCTOR TUNNELING [J].
MAHAN, GD ;
CONLEY, JW .
APPLIED PHYSICS LETTERS, 1967, 11 (01) :29-&
[6]  
MALIK RJ, 1981, I PHYS C SER, V56, pCH9
[7]  
MALIK RJ, 1980, ELECTRON LETT, V16, P837
[8]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH4
[9]  
VANDERZIEL A, 1976, SOLID STATE PHYSICAL, P289
1