ANNEALING BEHAVIOR OF ION-IMPLANTED NICKEL-ALUMINUM ALLOY

被引：15
|
作者：
HIRVONEN, J
机构：
来源：
APPLIED PHYSICS | 1980年 / 23卷 / 04期
关键词：
D O I：
10.1007/BF00903214
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：349 / 354
页数：6
相关论文
共 50 条
  • [1] ANNEALING KINETICS OF ION-IMPLANTED NICKEL-ALUMINUM ALLOY
    HIRVONEN, J
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04): : 243 - 246
  • [2] ANNEALING BEHAVIOUR OF ION-IMPLANTED NICKEL-ALUMINIUM ALLOY.
    Hirvonen, J.
    Applied physics Berlin, 1980, 23 (04): : 349 - 354
  • [3] OXIDATION BEHAVIOR OF ION-IMPLANTED NICKEL
    SLATER, M
    CARTER, G
    GRANT, WA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 1023 - 1028
  • [4] ANNEALING BEHAVIOR OF ION-IMPLANTED ALUMINUM ATOMS IN SILICON BY USE OF CAPPING FILM
    WATANABE, M
    ISHIWATA, O
    NAGANO, M
    KIRIHATA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (11) : 3427 - 3431
  • [5] ANNEALING BEHAVIOR OF ION-IMPLANTED FE IN INP
    SCHWARZ, SA
    SCHWARTZ, B
    SHENG, TT
    SINGH, S
    TELL, B
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1698 - 1700
  • [6] THERMAL ANNEALING BEHAVIOR OF ION-IMPLANTED SILICA GLASS
    FUKUMI, K
    CHAYAHARA, A
    YAMANAKA, H
    FUJII, K
    HAYAKAWA, J
    SATOU, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 163 (01) : 59 - 64
  • [7] RADIATION-DAMAGE AND ANNEALING STUDIES OF ION-IMPLANTED ALUMINUM
    BUONAQUISTI, AD
    COLLINS, RA
    DEARNALEY, G
    RADIATION EFFECTS LETTERS, 1981, 67 (1-2): : 43 - 48
  • [8] ANNEALING BEHAVIOR AND SELECTED APPLICATIONS OF ION-IMPLANTED ALLOYS
    MYERS, SM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05): : 1650 - 1655
  • [9] NATURE AND ANNEALING BEHAVIOR OF DISORDERS IN ION-IMPLANTED SILICON
    TOKUYAMA, T
    MIYAO, M
    YOSHIHIRO, N
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (08) : 1301 - 1315
  • [10] ANNEALING BEHAVIOR OF INSULATING LAYER IN ION-IMPLANTED CDS
    YAMAGUCHI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (04) : 723 - 724
12345