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- [2] THE EFFECT OF GATE BIAS ON HOT-ELECTRON TRAPPINGJAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L574 - L576MATSUMOTO, HSAWADA, KASAI, SHIRAYAMA, MNAGASAWA, K
- [3] P-WELL BIAS DEPENDENCE OF ELECTRON TRAPPING IN GATE OXIDE OF N-MOSFETS DURING SUBSTRATE HOT-ELECTRON INJECTIONELECTRONICS LETTERS, 1992, 28 (22) : 2080 - 2082ZHAO, SPTAYLOR, SECCLESTON, WBARLOW, KJ
- [4] THE EFFECT OF HOT-ELECTRON INJECTION ON THE INTENSITY OF NOISE PULSES IN AVALANCHE MIS PHOTODETECTORSDOKLADY AKADEMII NAUK BELARUSI, 1989, 33 (11): : 993 - 996VETOKHIN, SSZALESSKY, VBMALYSHEV, SASHUNEVICH, SA
- [5] Hot-electron induced electroluminescence and avalanche multiplication in hydrogenated amorphous siliconJOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 200 : 198 - 201Toyama, THiratsuka, KOkamoto, HHamakawa, Y
- [6] INTERFACE TRAPPED CHARGE GENERATION AND ELECTRON TRAPPING KINETICS IN MOSFETS DUE TO SUBSTRATE HOT-ELECTRON INJECTION INTO GATE SIO2JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1760 - 1764SHIONO, NNAKAJIMA, OHASHIMOTO, C
- [7] Hot-electron-induced quasibreakdown of thin gate oxidesJOURNAL OF APPLIED PHYSICS, 1997, 82 (01) : 297 - 302Umeda, KTaniguchi, K
- [8] Floating-Gate MOS Charge Programming Using Pulsed Hot-Electron Injection2013 10TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE), 2013, : 478 - 481Ochoa-Padilla, J. L.Gomez-Castaneda, F.Moreno-Cadenas, J. A.
- [9] HOT-ELECTRON HARDENED SI-GATE MOSFET UTILIZING F-IMPLANTATIONIEEE ELECTRON DEVICE LETTERS, 1989, 10 (04) : 141 - 143NISHIOKA, YOHYU, KOHJI, YNATUAKI, NMUKAI, KMA, TP
- [10] HOT-ELECTRON INDUCED INTERFACE TRAPS IN METAL/SIO2/SI CAPACITORS - THE EFFECT OF GATE-INDUCED STRAINAPPLIED PHYSICS LETTERS, 1986, 48 (18) : 1208 - 1210HOOK, TBMA, TP