EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS ON SI GROWN BY MOCVD

被引：50

作者：

SOGA, T ^{[1
]}

HATTORI, S ^{[1
]}

SAKAI, S ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECTR & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90343-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：498 / 502

页数：5

共 11 条

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[8] MOCVD GROWTH OF GAAS ON SI SUBSTRATES WITH ALGAP AND STRAINED SUPERLATTICE LAYERS [J].

SOGA, T ;

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[9] CHARACTERIZATION OF EPITAXIALLY GROWN GAAS ON SI SUBSTRATES WITH III-V COMPOUNDS INTERMEDIATE LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SOGA, T ;

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[10]

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