IMPATT DEVICE SIMULATION AND PROPERTIES

被引：31

作者：

BAUHAHN, P ^{[1
]}

HADDAD, GI ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTR PHYS LAB,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 06期

关键词：

D O I：

10.1109/T-ED.1977.18795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：634 / 642

页数：9

共 23 条

[1] EFFICIENCY ENHANCEMENT IN AVALANCHE-DIODES BY DEPLETION-REGION-WIDTH MODULATION
BLAKEY, PA
CULSHAW, B
GIBLIN, RA
[J]. ELECTRONICS LETTERS, 1974, 10 (21) : 435 - 436
[2] EFFECT OF TRANSFERRED-ELECTRON VELOCITY MODULATION IN HIGH-EFFICIENCY GAAS IMPATT DIODES
CONSTANT, E
MIRCEA, A
PRIBETICH, J
FARRAYRE, A
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3934 - 3940
[3] ON THE SOLUTION OF NONLINEAR HYPERBOLIC DIFFERENTIAL EQUATIONS BY FINITE DIFFERENCES
COURANT, R
ISAACSON, E
REES, M
[J]. COMMUNICATIONS ON PURE AND APPLIED MATHEMATICS, 1952, 5 (03) : 243 - 255
[4] A practical method for numerical evaluation of solutions of partial differential equations of the heat-conduction type
Crank, J
Nicolson, P
[J]. ADVANCES IN COMPUTATIONAL MATHEMATICS, 1996, 6 (3-4) : 207 - 226
[5] CHARGE-LIMITED DOMAINS IN GALLIUM-ARSENIDE AVALANCHE-DIODES
CULSHAW, B
BLAKEY, PA
GIBLIN, RA
[J]. ELECTRONICS LETTERS, 1975, 11 (05) : 102 - 104
[6] COMPUTER SIMULATION OF INSTABILITY AND NOISE IN HIGH-POWER AVALANCHE DEVICES
GIBLIN, RA
SCHERER, EF
WIERICH, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) : 404 - 418
[7] ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS
GRANT, WN
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1189 - 1203
[8] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS
HALL, R
LECK, JH
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) : 529 - &
[9] PREMATURE COLLECTION MODE IN IMPATT DIODES
KUVAS, RL
SCHROEDER, WE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) : 549 - 558
[10] SEMICONDUCTOR-DEVICE SIMULATION
LEE, CM
LOMAX, RJ
HADDAD, GI
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, TT22 (03) : 160 - 177

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