DETERMINATION OF THE FREE-ENERGY LEVEL OF DEEP CENTERS, WITH APPLICATION TO GAAS

被引：54

作者：

PONS, D ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 04期

关键词：

D O I：

10.1063/1.91926

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：413 / 415

页数：3

共 15 条

[1] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J].

BLEICHER, M ;

LANGE, E .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :375-380

[2] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON [J].

BROTHERTON, SD ;

BRADLEY, P ;

BICKNELL, J .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3396-3403

[3]

GRIMMEISS HG, 1979, 2ND LUND INT C DEEP

[4] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[6]

LANG DV, 1975, LATTICE DEFECTS SEMI, V23, P581

[7] DEEP-LEVEL TRAPS AND CONDUCTION-BAND STRUCTURE OF INP [J].

MAJERFELD, A ;

WADA, O ;

CHOUDHURY, ANMM .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :957-959

[8] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].

MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

ELECTRONICS LETTERS, 1977, 13 (07) :191-193

[9]

MIRCEA A, 1977, J PHYS LETT-PARIS, V38, pL41, DOI 10.1051/jphyslet:0197700380104100

[10] ELECTRON AND HOLE CAPTURE CROSS-SECTIONS AT DEEP CENTERS IN GALLIUM-ARSENIDE [J].

MITONNEAU, A ;

MIRCEA, A ;

MARTIN, GM ;

PONS, D .

REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (10) :853-861

← 1 2 →