GROWTH-RATES FOR PT2SI AND PTSI FORMATION UNDER UHV AND CONTROLLED IMPURITY ATMOSPHERES

被引：69

作者：

CRIDER, CA ^{[1
]}

POATE, JM ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 06期

关键词：

D O I：

10.1063/1.91522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：417 / 419

页数：3

共 18 条

[1] MICROSTRUCTURAL AND ELECTRICAL PROPERTIES OF THIN PTSI FILMS AND THEIR RELATIONSHIPS TO DEPOSITION PARAMETERS [J].

ANDERSON, RM ;

REITH, TM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1337-1347

[2] ANALYTICAL STUDY OF PLATINUM SILICIDE FORMATION [J].

BINDELL, JB ;

COLBY, JW ;

WONSIDLER, DR ;

POATE, JM ;

CONLEY, DK ;

TISONE, TC .

THIN SOLID FILMS, 1976, 37 (03) :441-452

[3] PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS [J].

CANALI, C ;

CATELLANI, C ;

PRUDENZIATI, M ;

WADLIN, WH ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1977, 31 (01) :43-45

[4] UHV CHAMBER FOR METAL-SEMICONDUCTOR AND METAL-METAL THIN-FILM STUDIES [J].

CRIDER, CA ;

POATE, JM ;

ROWE, JE ;

WHEATLEY, GH .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :701-704

[5] UHV FACILITY FOR METAL-SEMICONDUCTOR THIN-FILM STUDIES [J].

CRIDER, CA ;

POATE, JM ;

ROWE, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :215-218

[6]

CRIDER CA, 1979, THESIS PRINCETON U

[7] INTERDIFFUSION AND COMPOUND FORMATION IN THIN FILMS OF PD OR PT ON SI SINGLE CRYSTALS [J].

DROBEK, J ;

SUN, RC ;

TISONE, TC .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (01) :243-+

[8] LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM [J].

HIRAKI, A ;

NICOLET, MA ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1971, 18 (05) :178-&

[9] ORIENTED GROWTH OF INTERFACIAL PTSI LAYER OR BETWEEN PT AND SI [J].

KAWAMURA, T ;

SHINODA, D ;

MUTA, H .

APPLIED PHYSICS LETTERS, 1967, 11 (03) :101-+

[10] BEAM-LEAD TECHNOLOGY [J].

LEPSELTE.MP .

BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02) :233-&

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