THICKNESS DEPENDENCE OF STRUCTURE IN THIN-FILMS OF LOW-TEMPERATURE SILVER SELENIDE

被引:39
作者
GUNTER, JR
KEUSCH, P
机构
[1] Institute for Inorganic Chemistry, University of Zürich, CH-8057 Zürich
关键词
D O I
10.1016/0304-3991(93)90236-Q
中图分类号
TH742 [显微镜];
学科分类号
摘要
The growth and structure of thin films of low-temperature (LT) silver selenide (Ag2Se) were studied by HREM and electron diffraction. Samples were produced by the reaction of vacuum-deposited epitaxial silver films (1-30 nm thick) on NaCl substrates with equivalent amounts of selenium vapour. The structure of thin Ag2Se crystals is initially found to be monoclinic, pseudo-tetragonal, while it turns to the known orthorhombic LT phase at higher thicknesses (greater-than-or-equal-to 20 nm). It is noteworthy that the difference of phases observed is only an effect of crystal thickness. Comparisons were made between such thin crystals with those grown on continuous 30 nm thick single-crystalline silver layers. A reversible phase transition between the orthorhombic LT and cubic high-temperature (HT) phases could be induced by changing the electron beam intensity during TEM investigation (75 kV). The following orientation relationships between the body-centred cubic (C, a = 0.498 nm) HT phase, the monoclinic, pseudo-tetragonal (M, a = b = 0.706 nm, c = 0.498 nm, beta = 90-degrees) and orthorhombic (O, a = 0.433, b = 0.706, c = 0.776 nm) LT phases were determined: [100]C parallel-to [110]M and [110]M, [110]C parallel-to [111BAR]M and [100]M; [201BAR]M parallel-to [100]O, [010]M parallel-to [010]O and [101]M parallel-to [001]O; [222BAR]C parallel-to[100]O, [110]C parallel-to [010]O and [112BAR]C parallel-to [001]O. No triclinic or monoclinic (different from the determined pseudo-tetragonal) phases could be observed, although numerous references (listed in this paper) about such phases exist.
引用
收藏
页码:293 / 307
页数:15
相关论文
共 50 条
[21]   LOW-TEMPERATURE ANISOTROPY OF THERMAL-EXPANSION OF THIN-FILMS [J].
SHUSTOV, AV .
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (01) :113-114
[22]   LOW-TEMPERATURE PHOTOCONDUCTIVITY IN ANODIC TANTALUM OXIDE THIN-FILMS [J].
BOKHARI, WH ;
NAZAR, FM .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1987, 62 (04) :567-571
[23]   LOW-TEMPERATURE DEPOSITION OF VO2 THIN-FILMS [J].
CASE, FC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1990, 8 (03) :1395-1398
[24]   LOW-TEMPERATURE INTERDIFFUSION BETWEEN ALUMINUM THIN-FILMS AND GAAS [J].
CHRISTOU, A ;
DAY, HM .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4217-4219
[25]   THICKNESS DEPENDENCE OF RESISTIVITY IN IN-BI THIN-FILMS [J].
DAS, VD ;
JAGADEESH, MS .
VACUUM, 1981, 31 (01) :15-17
[26]   THICKNESS DEPENDENCE OF ELECTRODYNAMIC PROPERTIES OF TLCABACUO THIN-FILMS [J].
MARTENS, JS ;
HIETALA, VM ;
VENTURINI, EL ;
LEE, WY .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7571-7574
[27]   TRANSPORT PROPERTIES OF TELLURIUM THIN-FILMS AND THEIR DEPENDENCE ON THICKNESS [J].
KUBOVY, A ;
JANDA, M .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1976, 35 (02) :471-476
[28]   THICKNESS DEPENDENCE OF THE DIELECTRIC SUSCEPTIBILITY OF FERROELECTRIC THIN-FILMS [J].
ZHONG, WL ;
QU, BD ;
ZHANG, PL ;
WANG, YG .
PHYSICAL REVIEW B, 1994, 50 (17) :12375-12380
[29]   ELECTRON EFFECTIVE MASS IN THE LOW-TEMPERATURE PHASE OF SILVER SELENIDE THICK-FILMS [J].
CONSTANTINESCU, LV .
REVUE ROUMAINE DE PHYSIQUE, 1983, 28 (01) :73-79
[30]   LOW-TEMPERATURE QUANTUM BEHAVIOR OF ANTIFERROMAGNETIC SIMPLE CUBIC THIN-FILMS [J].
LOISON, D ;
DIEP, HT .
PHYSICS LETTERS A, 1992, 162 (05) :405-408