PHOTOLUMINESCENCE AND ITS EXCIMER-LASER IRRADIATION EFFECTS IN SIO2 FILM PREPARED BY PHOTOINDUCED CHEMICAL-VAPOR-DEPOSITION

Defects and other imperfections in photo-induced chemical vapor deposition (photo-CVD) SiO2 films have been characterized by photoluminescence excited by ArF and F2 excimer lasers. Photoluminescence peaks have been observed at around 2.7, 3.5 and 4.4 eV and are characteristic of both the deposition temperatures of photo-CVD and excitation energy. The intensity of the photoluminescence peak at around 2.7 eV initially increases with ArF excimer laser irradiation but decreases after about 2000 shots. On the other hand, it decreases monotonously with F2 excimer laser irradiation. The origins of these peaks have been discussed in terms of various dependences of photoluminescence and absorption spectra.