INTRINSIC ELECTRIC-FIELDS EFFECT ON GATE TURN-OFF PROCESS OF P-N-P-N DEVICES

被引：0

作者：

LINIICHUK, IA

PALAMARC.AI

机构：

来源：

RADIOTEKHNIKA I ELEKTRONIKA | 1973年 / 18卷 / 08期

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暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1682 / 1687

页数：6

共 50 条

[1] GATE TURN-OFF IN P-N-P-N DEVICES
WOLLEY, ED
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) : 590 - &
[2] TURN-OFF CHARACTERISTICS OF P-N-P-N DEVICES
YANG, ES
SOLID-STATE ELECTRONICS, 1967, 10 (09) : 927 - +
[3] INVESTIGATION OF TURN-OFF OF A P-N-P-N STRUCTURE BY A GATE CURRENT PULSE
AYAZYAN, RE
BURTSEV, EF
GREKHOV, IV
LINIICHU.IA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 176 - &
[4] TURN-OFF GAIN IN P-N-P-N TRIODES
GOLDEY, JM
MACKINTOSH, IM
ROSS, IM
SOLID-STATE ELECTRONICS, 1961, 3 (02) : 119 - 122
[5] TURN-OFF PROCESS IN A P-N-P-N STRUCTURE AT HIGH INJECTION LEVELS IN BASE LAYERS
GREKHOV, IV
KOSTINA, LS
OTBLESK, AE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 1998 - &
[6] TURN-OFF PROCESS OF A p-n-p-n STRUCTURE FOR A HIGH INJECTION LEVEL IN THE BASE LAYERS.
Grekhov, I.V.
Kostina, L.S.
Lebedev, A.A.
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1972, 17 (04): : 664 - 667
[7] Turn-off time of p-n-p-n structures in small reverse current and voltage regimes
Rabkin, P.B.
Selenikov, K.L.
Soviet journal of communications technology & electronics, 1988, 33 (12): : 171 - 173
[8] TURN-ON CRITERION FOR P-N-P-N DEVICES
GENTRY, FE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (02) : 74 - &
[9] TRANSIENT PHENOMENA DURING TURN-OFF OF P-N-P-N STRUCTURE BY A BASE CONTROL CURRENT
LEBEDEV, AA
UVAROV, AI
CHELNOKO.VY
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (01): : 89 - &
[10] NEW WAY FOR REDUCING TURN-OFF TIME OF HIGH-VOLTAGE P-N-P-N STRUCTURES
GREKHOV, IV
KOSTINA, LS
SERGEEV, VG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (07): : 1236 - &

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