ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET

被引：30

作者：

HSIEH, CM

MATHEWS, JR

SEIDEL, HD

PICKAR, KA

DRUM, CM

机构：

[1] BELL TEL LABS, READING, PA 19604 USA

[2] BELL TEL LABS, MURRAY HILL, NJ 07974 USA

[3] BELL TEL LABS, ALLENTOWN, PA 18103 USA

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 05期

关键词：

D O I：

10.1063/1.1654624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：238 / 240

页数：3

共 9 条

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HSIEH, CM ;

POATE, JM ;

PICKAR, KA .

APPLIED PHYSICS LETTERS, 1972, 21 (10) :485-&

[2]

BUCK TM, 1968, BELL SYST TECH J, V47, P1927

[3]

CROWELL MH, 1967, 1967 INT SOL STAT CI, P128

[4] THE DISPLACEMENT OF ATOMS IN SOLIDS BY RADIATION [J].

KINCHIN, GH ;

PEASE, RS .

REPORTS ON PROGRESS IN PHYSICS, 1955, 18 :1-51

[5] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J].

KOCK, AJRD .

APPLIED PHYSICS LETTERS, 1970, 16 (03) :100-&

[6]

MASTERS BJ, 1971, ION IMPLANTATION, P81

[7]

MAYER JW, 1970, ION IMPLANTATION SEM, P100

[8] POISONING AND GETTERING EFFECTS IN SILICON JUNCTIONS [J].

METS, EJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) :420-&

[9]

THOMSEN PV, 1970, ION IMPLANTATION SEM, P68

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