CHARACTERIZATION OF SYNTHETIC DIAMOND THIN-FILMS

被引：19

作者：

RAMESHAM, R ^{[1
]}

ROPPEL, T ^{[1
]}

ELLIS, C ^{[1
]}

HAJEK, BF ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT AGRON,AUBURN,AL 36849

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 10期

关键词：

D O I：

10.1149/1.2086186

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

High-pressure, microwave plasma-assisted chemical vapor deposition is employed to deposit diamond thin films, using a gas mixture of methane and hydrogen on single-crystal silicon substrates. The deposition rate is approximately 1 micron/h. As-deposited diamond thin films on a silicon substrate and free-standing diamond thin films are analyzed by scanning electron microscopy, Raman spectroscopy, and x-ray diffraction. Thermal stability of free-standing diamond thin films is studied in oxygen and argon ambient, separately, using thermogravimetric analysis. It is found that these films maintain integrity in oxygen up to 676°C. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：3203 / 3205

页数：3

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