GAINASP-INP DH LASER GROWN BY NEWLY DESIGNED VERTICAL LPE FURNACE

被引：17

作者：

WAKAO, K ^{[1
]}

MORIKI, K ^{[1
]}

KAMBAYASHI, T ^{[1
]}

IGA, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,PRECIS MACHINERY & ELECTR RES LABS,MIDORI KU,YOKOHAMA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 11期

关键词：

D O I：

10.1143/JJAP.16.2073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2073 / 2074

页数：2

共 10 条

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[7] GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J].

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[8] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAAS ON INP [J].

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[9] LIQUID-PHASE EPITAXIAL-GROWTH OF 6-LAYER GAAS-(GAAL)AS STRUCTURES FOR INJECTION LASERS WITH 0.04 MU-M THICK CENTER LAYER [J].

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[10]

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