PHOSPHOROUS-ION-IMPLANTED CDS

被引：57

作者：

ANDERSON, WW

MITCHELL, JT

机构：

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 10期

关键词：

D O I：

10.1063/1.1651841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：334 / &

共 15 条

[1]

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[3]

GATOS HC, 1965, PROGRESS SEMICONDUCT, V9, P39

[4]

GIBSON A, 1965, PROGRESS SEMICOND ED, V9, P39

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ING, SW .

PHYSICAL REVIEW LETTERS, 1962, 8 (11) :426-&

[6] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J].

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[7]

Hoogenstraaten W., 1958, PHILIPS RES REP, V13, P515

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THOMAS, DG .

PHYSICAL REVIEW, 1961, 122 (01) :35-&

[9] DOUBLE INJECTION IN INSULATORS [J].

LAMPERT, MA .

PHYSICAL REVIEW, 1962, 125 (01) :126-&

[10] INJECTION CURRENTS IN INSULATORS [J].

LAMPERT, MA .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (08) :1781-&

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