PROBLEM OF BAND SCHEME OF ACCIDENTALLY DOPED HIGH-RESISTIVITY SIC SINGLE CRYSTALS

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作者：
LISITSA, MP
KRASNOV, YS
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1968年 / 2卷 / 04期
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O469 [凝聚态物理学];
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070205 ;
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页码：441 / &
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