STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED GAAS AND REDISTRIBUTION OF CR DURING ANNEALING

被引：30
作者：
MAGEE, TJ
KAWAYOSHI, H
ORMOND, RD
CHRISTEL, LA
GIBBONS, JF
HOPKINS, CG
EVANS, CA
DAY, DS
机构：
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[2] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402
[3] AVANTEK INC,SANTA CLARA,CA 95051
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 11期
关键词：
D O I：
10.1063/1.92602
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：906 / 908
页数：3
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[6]   ANNEALING OF DAMAGE AND REDISTRIBUTION OF CR IN BORON-IMPLANTED SI3N4-CAPPED GAAS [J].
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