UNIAXIAL-STRESS MEASUREMENTS ON THE 0.97EV LINE IN IRRADIATED SILICON

被引：32

作者：

FOY, CP

DOCARMO, MC

DAVIES, G

LIGHTOWLERS, EC

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 01期

关键词：

D O I：

10.1088/0022-3719/14/1/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L7 / L12

页数：6

共 14 条

[1] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J].

BEAN, AR ;

NEWMAN, RC ;

SMITH, RS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) :739-&

[2] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1974, 9 (06) :2607-2617

[3] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].

CHENG, LJ ;

CORELLI, JC ;

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1966, 152 (02) :761-+

[4] TEMPERATURE DEPENDENCE OF VIBRONIC SPECTRA IN IRRADIATED SILICON [J].

HARE, APG ;

DAVIES, G ;

COLLINS, AT .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (11) :1265-+

[5] UNIAXIAL STRESS SPLITTING OF DOUBLY DEGENERATE STATES OF TETRAGONAL AND TRIGONAL CENTRES IN CUBIC CRYSTALS [J].

HUGHES, AE ;

RUNCIMAN, WA .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 90 (569P) :827-&

[6]

Jones C. E., 1971, Radiation Effects, V9, P83, DOI 10.1080/00337577108242037

[7]

KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329

[8]

KONOPLEV VS, 1977, RAD EFFECTS SEMICOND, P244

[9] TEMPERATURE DEPENDENCE OF PAIR BAND LUMINESCENCE IN GAP [J].

MAEDA, K .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (03) :595-&

[10]

TKACHOV VD, 1977, RAD EFFECT SEMICONDU, P231

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