EVIDENCE FROM TRANSMISSION ELECTRON-MICROSCOPY FOR AN OXYNITRIDE LAYER IN OXIDIZED SI3N4

被引：30

作者：

OGBUJI, LUJT

SMIALEK, JL

机构：

[1] NASA Lewis Research Center, Cleveland

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 10期

关键词：

D O I：

10.1149/1.2085384

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Microstructural and energy dispersive spectrometry evidence is produced, from transmission electron microscopy, to show that a silicon oxynitride inner layer is produced by the oxidation of silicon nitride in dry oxygen at 1350-degrees-C, as proposed by Tressler and co-workers. However, details of the microstructures at the oxide/nitride interface do not agree entirely with the rest of the Tressler model for the oxidation of Si3N4

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页码：L51 / L53

页数：3

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