MINORITY CARRIER LIFETIME IN HIGHLY DOPED GE

[1] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[2] BLINOV LM, 1968, FIZ TVERD TELA+, V9, P2537

[3] INDIRECT BAND-TO-BAND AUGER RECOMBINATION IN GE [J]. PHYSICAL REVIEW LETTERS, 1968, 20 (01) : 8 - +

[4] INDIRECT BAND TO BAND AUGER-RECOMBINATION IN GERMANIUM [J]. ZEITSCHRIFT FUR PHYSIK, 1968, 209 (05): : 445 - &

[5] PHONON-ASSISTED AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 204 - &

[6] KARPOVA IV, 1962, INT C PHYS SEMICOND, P880

[7] AUGER EFFECT INVOLVING RECOMBINATION CENTRES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 83 (5322): : 325 - &

[8] LANDSBERG PT, 1964, INT C PHYS SEMICOND

[9] IDENTIFICATION OF AUGER ELECTRONS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (01) : 29 - +

[10] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687

[1] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[2] BLINOV LM, 1968, FIZ TVERD TELA+, V9, P2537

[3] INDIRECT BAND-TO-BAND AUGER RECOMBINATION IN GE [J]. PHYSICAL REVIEW LETTERS, 1968, 20 (01) : 8 - +

[4] INDIRECT BAND TO BAND AUGER-RECOMBINATION IN GERMANIUM [J]. ZEITSCHRIFT FUR PHYSIK, 1968, 209 (05): : 445 - &

[5] PHONON-ASSISTED AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500): : 204 - &

[6] KARPOVA IV, 1962, INT C PHYS SEMICOND, P880

[7] AUGER EFFECT INVOLVING RECOMBINATION CENTRES [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 83 (5322): : 325 - &

[8] LANDSBERG PT, 1964, INT C PHYS SEMICOND

[9] IDENTIFICATION OF AUGER ELECTRONS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (01) : 29 - +

[10] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687