PSEUDOPOTENTIAL CALCULATIONS OF BAND STRUCTURE OF GAAS, INAAS AND (GAIN) AS ALLOYS

被引：51

作者：

JONES, D

LETTINGTON, AH

机构：

[1] Royal Radar Establishment, Malvern, Worcestershire England

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 18期

关键词：

D O I：

10.1016/0038-1098(69)90361-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Pseudopotential band structure calculations have been performed for GaAs, InAs and (GaIn) As alloys. These calculations are based on the Heine-Abarenkov model potential screened to a local approximation with Penn's expression for the dielectric constant. The calculated band gaps agree well with experimental values. © 1969.

引用

页码：1319 / +

页数：1

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