EXTERNAL QUANTUM ELECTRO-LUMINESCENCE YIELD IN THE DOUBLE ALGAAS-HETEROSTRUCTURES WITH ADDITIONAL RE-RADIATING LAYERS

被引：0
作者：
AGAFONOV, VG
GARBUZOV, DZ
DAVIDYUK, NY
ERMAKOVA, AN
TUPITSKAYA, NA
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ZHURNAL TEKHNICHESKOI FIZIKI | 1982年 / 52卷 / 01期
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O59 [应用物理学];
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页码：173 / 176
页数：4
相关论文
共 10 条
[1]  
Alferov Z. I., 1976, FIZ TEKH POLUPROV, V10, P1497
[2]  
ALFEROV ZI, 1973, ZH TEKH FIZ+, V43, P2413
[3]  
ALFEROV ZI, 1974, FIZ TEKH POLUPROV, V8, P561
[4]  
ALFEROV ZI, 1975, FIZ TEKH POLUPROV, V9, P1265
[5]  
ALFEROV ZI, 1975, FIZ TEKH POLUPROV, V9, P462
[6]  
BONDAR SA, 1979, PISMA ZHTF, V5, P217
[7]   CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].
CASEY, HC ;
SELL, DD ;
WECHT, KW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257
[8]  
DAUSON R, 1977, APPL PHYS, V48, P2485
[9]  
GARBUZOV DZ, 1974, FIZ TEKH POLUPROV, V8, P168
[10]  
GARBUZOV DZ, 1981, FTP, V15, P1498
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