ANOMALOUS MAGNETORESISTANCE OF (ZN1-XMNX)(3)AS-2 IN THE REGION OF HOPPING CONDUCTIVITY

被引：2

作者：

LAIHO, R ^{[1
]}

LISUNOV, KG ^{[1
]}

STAMOV, VN ^{[1
]}

ZAHVALINSKII, VS ^{[1
]}

机构：

[1] MOLDAVIAN ACAD SCI,INST APPL PHYS,KISHINEV 277028,MOLDOVA

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 02期

关键词：

D O I：

10.1016/0038-1098(94)00612-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Measurements of magnetoresistance have been carried out between 4-20 K for (Zn1-xMnx)(3)As-2 with 0.01 less than or equal to x less than or equal to 0.13. A positive contribution to magnetoresistance prevailing at H < H-0 is attributed to shift of the mobility threshold. A negative part is observed above H-0 approximate to 1-3T, depending on x. It is connected with suppression of the underbarrier spin-flip scattering of holes in the magnetic field.

引用

页码：151 / 154

页数：4

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