ION-BEAM ASSISTED DEPOSITION WITH A DUOPLASMATRON

被引：11
作者：
ENSINGER, W
BARTH, M
MARTIN, H
SCHROER, A
ENDERS, B
EMMERICH, R
WOLF, GK
机构：
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 1992年 / 63卷 / 05期
关键词：
D O I：
10.1063/1.1142606
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
One of the recent applications of ion sources is their use for ion beam assisted deposition of thin films and coatings. This method combines a coating technique such as evaporation or sputtering with bombardment with ions in the keV energy range. The required ions with defined energy, flux, and impact angle are delivered from an ion source. An apparatus for ion beam assisted evaporation with a duoplasmatron ion source is described. The features of the duoplasmatron with respect to application for ion beam assisted deposition such as beam shape, uniformity and intensity, ion-to-neutral ratio, and focused and defocused mode are discussed.
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页码：3058 / 3062
页数：5
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