PHYSICAL CHARACTERIZATION OF HALOGENATED AND HYDROGENATED AMORPHOUS-SILICON FILMS

被引：14

作者：

AUGELLI, V

MURRI, R

GALASSINI, S

TEPORE, A

机构：

[1] CNR,NAZL STRUTTURA MAT GRP,BARI,ITALY

[2] UNIV LECCE,IST FIS,I-73100 LECCE,ITALY

来源：

THIN SOLID FILMS | 1980年 / 69卷 / 03期

关键词：

D O I：

10.1016/0040-6090(80)90582-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：315 / 320

页数：6

共 10 条

[1]

AUGELLI V, 1979, 18TH INT C SOL EN NE

[2] RF PLASMA DEPOSITION OF AMORPHOUS-SILICON FILMS FROM SICL4-H2 [J].

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CAPEZZUTO, P ;

CRAMAROSSA, F ;

DAGOSTINO, R .

THIN SOLID FILMS, 1980, 67 (01) :103-107

[3]

CARLSON DE, 1977, RCA REV, V38, P211

[4]

FRIEDMAN L, 1973, ELECTRONIC STRUCTURA, pCH9

[5]

MOTT NF, 1971, ELECTRONIC PROCESSES, pCH7

[6] LOCALIZED STATES IN AMORPHOUS AND POLYCRYSTALLIZED SI [J].

NAKASHITA, T ;

HIROSE, M ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) :985-991

[7]

SPEAR WE, 1976, PHOTOCONDUCTIVITY RE, pCH6

[8]

Tauc J., 1974, AMORPHOUS LIQUID SEM

[9] EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON [J].

TSAI, CC ;

FRITZSCHE, H .

SOLAR ENERGY MATERIALS, 1979, 1 (1-2) :29-42

[10] OPTICAL AND PHOTOCONDUCTIVE PROPERTIES OF DISCHARGE-PRODUCED AMORPHOUS SILICON [J].

ZANZUCCHI, PJ ;

WRONSKI, CR ;

CARLSON, DE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5227-5236

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