CORRELATION BETWEEN ELASTICITY MODULUS OF METALLIC-FILMS AND THRESHOLD DOSE FOR MEV ION-INDUCED ADHESION

被引：2
作者：
LIU, ZM
DONG, JJ
机构：
[1] Department of Modern Physics, Lanzhou University
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 44卷 / 04期
关键词：
D O I：
10.1016/0168-583X(90)90006-G
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Films of In, Sn, Al, Cu, Pd and Ni were deposited on Teflon substrates and bombarded with 6 MeV F ions. The Scotch tape test was employed to measure adhesion changes as a function of dose. It is found that the threshold dose seems to be proportional to the ratio of the film material elasticity modulus to the electronic stopping power. An empirical formula for calculating threshold dose is presented. The experimental results suggest that the enhanced adhesion effect may be correlated with changes of internal stresses in the film and substrate. Some of the phenomena involving MeV ion-induced adhesion are explained in terms of this stress change model. © 1990.
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页码：445 / 448
页数：4
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