DOPANT SEGREGATION IN SILICON BY PULSED-LASER ANNEALING - TEST CASE FOR THE CONCEPT OF THERMAL MELTING

被引：13

作者：

HOONHOUT, D

SARIS, FW

机构：

[1] FOM-Institute for Atomic and Molecular Physics, Amsterdam

来源：

PHYSICS LETTERS A | 1979年 / 74卷 / 3-4期

关键词：

D O I：

10.1016/0375-9601(79)90786-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

RBS-analysis of the effects of ruby-laser irradiation on Si(100) implanted with Ga, Ge, Sn, As, Sb, Bi, Se and Te shows that there is no direct correlation between the dopant redistribution and the equilibrium distribution coefficients (ranging from 0.33 to less than 10-8). Hence surface accumulation after pulsed-laser annealing as yet does not provide evidence for the concept of thermal melting. © 1979.

引用

页码：253 / 255

页数：3

共 9 条

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