AN ASYMPTOTIC-NUMERICAL METHOD OF ANALYZING TRANSPORT PROCESSES IN SEMICONDUCTORS

被引：1
作者：
VOLKOV, VT
KRYUCHKOV, SV
OBUKHOV, IA
RUMYANTSEV, SV
机构：
来源：
USSR COMPUTATIONAL MATHEMATICS AND MATHEMATICAL PHYSICS | 1989年 / 29卷 / 04期
关键词：
D O I：
10.1016/0041-5553(89)90128-6
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
A method is given for finding the system of equations of the drift-diffusion model in the lowest order of the theory of singular peturbations. Using this approach, both the stationary and dynamic laws governing the transport processes in a semiconductor structure can be analysed.
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页码：132 / 138
页数：7
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