PERFECTION OF LATTICE OF DISLOCATION-FREE SILICON, STUDIED BY LATTICE-CONSTANT AND DENSITY METHOD

被引：29

作者：

STRAUMANIS, M

JAMES, WJ

BORGEAUD, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1961年 / 32卷 / 07期

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D O I：

10.1063/1.1736238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1382 / &

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