SUBMICRON-GATE ION-IMPLANTED IN0.15GA0.85AS/GAAS MESFETS WITH GRADED INDIUM COMPOSITION

被引：0

作者：

WANG, GW ^{[1
]}

FENG, M ^{[1
]}

KALISKI, R ^{[1
]}

KUANG, JB ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 03期

关键词：

Field effect devices; Gallium arsen; Indium compound; Semiconductor devices and materials;

D O I：

10.1049/el:19900128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

0.25 μm and 0.5μm gate ion-implanted MESFETs have fabricated on In0.15Ga0.85As epitaxial layers. These layers are grown by MOCVD on three inch diameter GaAs sub strates with the indium mole fraction graded from 15% at the InGaAs/GaAs heterointerface to 0% at the surface. Both devices show excellent DC and microwave m From S-parameter measurements, extrinsic current gain cutoff frequencies fts of 120 and 61 GHz are obtained for the 0.25μm lira, and 0.5μm gate MESFETs, respectively. This work investigates the potential of small-bandgap InGaAs materials for submicron-gate MESFET applications. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：190 / 191

页数：2

共 8 条

[1] MODELING FREQUENCY-DEPENDENCE OF OUTPUT IMPEDANCE OF A MICROWAVE MESFET AT LOW-FREQUENCIES [J].